A 160Gb/s (4x40) WDM O-band Tx subassembly using a 4-ch array of silicon rings co-packaged with a SiGe BiCMOS IC driver

We present a 400 (8×50) Gb/s-capable RM-based Si-photonic WDM O-band TxRx with 1.17nm channel spacing for high-speed optical interconnects and demonstrate successful 50Gb/s-NRZ TxRx operation achieving a ~4.5dB Tx extinction ratio under 2.15Vpp drive

Semiconductor Optical Amplifier (SOA)–Based Amplification of Intensity-Modulated Optical Pulses — Deterministic Timing Jitter and Pulse Peak Power Equalization Analysis

During the last few years, large-scale efforts towards realizing high-photonic integration densities have put SOAs in the spotlight once again. Hence, the need to develop a complete framework for SOA-induced signal distortion to accurately evaluate a system’s performance has now become evident. To cope with this demand, we present a detailed theoretical and experimental investigation of the deterministic timing jitter and the pulse peak power equalization of SOA-amplified intensity-modulated optical pulses. The deterministic timing jitter model relies on the pulse mean arrival time estimation and its analytic formula reveals an approximate linear relationship between the deterministic timing jitter and the logarithmic values of intensity modulation when the SOA gain recovery time is faster than the pulse period. The theoretical analysis also arrives at an analytic expression for the intensity modulation reduction (IMR), which clearly elucidates the pulse peak power equalization mechanism of SOA. The IMR analysis shows that the output intensity modulation depth is linearly related to the respective input modulation depth of the optical pulses when the gain recovery time is faster than the pulse period. This novel theoretical platform provides a qualitative and quantitative insight into the SOA performance in case of intensity-modulated optical pulses

Towards Brain Imaging using THz Technology

Abstract- We demonstrate recent advances towards the development of a novel 2-D THz imaging system for brain imaging applications both at macroscopic and at biomolecule level. A frequency synthesized THz source based on Difference Frequency Generation between optical wavelengths is presented, utilizing supercontinuum generation in a highly-nonlinear optical fiber with subsequent spectral carving by means of a fiber FabryPerot filter. Experimental results confirm the successful generation of THz radiation in the range of 0.2-2 THz, verifying the enhanced frequency tunability properties of the proposed system. Finally, the roadmap towards capturing functional brain information by exploiting THz imaging technologies is discussed, outlining the unique advantages offered by THz frequencies and their complementarity with existing brain imaging techniques

Figure 1: Experimental setup 40 Gb/s NRZ Wavelength Conversion with Enhanced 2R Regeneration Characteristics using a Differentially-biased SOA-MZI switch

Abstract We present error-free 40 Gb/s NRZ signal wavelength conversion with a differential biasing scheme in a SOA -Mach Zehnder Interferometer. Experimental performance analysis shows 1.7 dB negative power penalty and enhanced 2R regenerative characteristics

Packet clock recovery using a bismuth oxide fiber-based optical power limiter

Abstract: We demonstrate an optical clock recovery circuit that extracts the line rate component on a per packet basis from short data packets at 40 Gb/s. The circuit comprises a Fabry-Perot filter followed by a novel power limiting configuration, which in turn consists of a 5m highly nonlinear bismuth oxide fiber in cascade with an optical bandpass filter. Both experimental and simulation-based results are in close agreement and reveal that the proposed circuit acquires the timing information within only a small number of bits, yielding a packet clock for every respective data packet. Moreover, we investigate theoretically the scaling laws for the parameters of the circuit for operation beyond 40 Gb/s and present simulation results showing successful packet clock extraction for 160 Gb/s data packets. Finally, the circuit's potential for operation at 320 Gb/s is discussed, indicating that ultrafast packet clock recovery should be in principle feasible by exploiting the passive structure of the device and the fsec-scale nonlinear response of the optical fiber

Temperature and wavelength drift tolerant WDM transmission and routing in on-chip silicon photonic interconnects

We demonstrate a temperature and wavelength shift resilient silicon transmission and routing interconnect system suitable for multi-socket interconnects, utilizing a dual-strategy CLIPP feedback circuitry that safeguards the operating point of the constituent photonic building blocks along the entire on-chip transmission-multiplexing-routing chain. The control circuit leverages a novel control power-independent and calibration-free locking strategy that exploits the 2nd derivative of ring resonator modulators (RMs) transfer function to lock them close to the point of minimum transmission penalty. The system performance was evaluated on an integrated Silicon Photonics 2-socket demonstrator, enforcing control over a chain of RM-MUX-AWGR resonant structures and stressed against thermal and wavelength shift perturbations. The thermal and wavelength stress tests ranged from 27 degrees C to 36 degrees C and 1309.90 nm to 1310.85 nm and revealed average eye diagrams Q-factor values of 5.8 and 5.9 respectively, validating the system robustness to unstable environments and fabrication variations. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreemen

Co-Package Technology Platform for Low-Power and Low-Cost Data Centers

We report recent advances in photonic–electronic integration developed in the European research project L3MATRIX. The aim of the project was to demonstrate the basic building blocks of a co-packaged optical system. Two-dimensional silicon photonics arrays with 64 modulators were fabricated. Novel modulation schemes based on slow light modulation were developed to assist in achieving an efficient performance of the module. Integration of DFB laser sources within each cell in the matrix was demonstrated as well using wafer bonding between the InP and SOI wafers. Improved semiconductor quantum dot MBE growth, characterization and gain stack designs were developed. Packaging of these 2D photonic arrays in a chiplet configuration was demonstrated using a vertical integration approach in which the optical interconnect matrix was flip-chip assembled on top of a CMOS mimic chip with 2D vertical fiber coupling. The optical chiplet was further assembled on a substrate to facilitate integration with the multi-chip module of the co-packaged system with a switch surrounded by several such optical chiplets. We summarize the features of the L3MATRIX co-package technology platform and its holistic toolbox of technologies to address the next generation of computing challenges